elektronische bauelemente SID9971-S 25a, 60v, r ds(on) 36m n-ch enhancement mode power mosfet 24-mar-2017 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 9971 to - 251s rohs compliant product a suffix of -c specifies halogen free description the SID9971-S is the highest performance trench n-ch mosfets with extreme high cell density , which provide excellent r ds(on) and gate charge for most of the synchronous buck converter applications. the SID9971-S meet the rohs and green product requirement with full function reliability approved . features advanced high cell density trench technology super low gate charge green device available marking absolute maximum ratings parameter symbol rating unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v t c =25c 25 drain current @v gs =10v 1 t c =100c i d 16 a pulsed drain current 2 i dm 50 a t c =25c 39 total power dissipation 1 t a =25c p d 2 w operating junction and storage temperature range t j , t stg -55~+150 c thermal resistance rating maximum thermal resistance from junction to ambient 1 62.5 maximum thermal resistance from junction to ambient r ja 110 maximum thermal resistance from junction to case 1 r jc 3.2 c / w 1 gate 3 source 2 drain date code millimeter millimeter ref. min. max. ref. min. max. a 6.40 6.731 g 6.0 6.223 b 5.21 5.46 h 0.85 1.15 c 2.20 2.38 j 2.286 bsc. d 0.40 0.58 k 0.77 1.1 4 e 6.89 7.493 m 0.64 0.88 f 3.98 4.28 p 0.40 0.60
elektronische bauelemente SID9971-S 25a, 60v, r ds(on) 36m n-ch enhancement mode power mosfet 24-mar-2017 rev. b page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j =25c unless otherwise specified) parameter symbol min. typ. max. unit test condition drain-source breakdown voltage b vdss 60 - - v v gs =0v, i d =250 a gate-threshold voltage v gs(th) 1 - 2.5 v v ds =v gs , i d =250 a - - 1 v ds =48v, v gs =0v, t j =25c drain-source leakage current i dss - - 25 a v ds =48v, v gs =0v, t j =125c gate-source leakage current i gss - - 100 na v gs = 20v, v ds = 0v forward transfer conductance gfs - 10 - s v ds =10v, i d =18a - 27 36 v gs =10v, i d =18a static drain-source on-resistance 3 r ds(on) - 31 45 m v gs =4.5v, i d =12a total gate charge @v gs =4.5v q g - 12.5 - total gate charge q g - 18 - gate-source charge q gs - 5 - gate-drain (miller) charge q gd - 6 - nc v ds =48v v gs =10v i d =18a turn-on delay time t d(on) - 7 - turn-on rise time t r - 9 - turn-off delay time t d(off) - 23 - turn-off fall time t f - 6 - ns v dd =30v i d =18a v gs =10v r g =3.3 r l =1.67 input capacitance c iss - 1572 - output capacitance c oss - 58 - reverse transfer capacitance c rss - 39 - pf v ds =30v v gs =0v f=1mhz source-drain diode diode forward voltage 3 v sd - - 1.2 v i s =25a, v gs =0 continuous source current 1 i s - - 25 pulsed source current 2 i sm - - 50 a reverse recovery time t rr - 37 - ns reverse recovery charge q rr - 38 - nc i s =18a, dl/dt=100a/ s t j =25c notes: 1. the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2. the power dissipation is limited by 150c junc tion temperature 3. the data tested by pulsed , pulse width Q 300us , duty cycle Q 2%
elektronische bauelemente SID9971-S 25a, 60v, r ds(on) 36m n-ch enhancement mode power mosfet 24-mar-2017 rev. b page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
elektronische bauelemente SID9971-S 25a, 60v, r ds(on) 36m n-ch enhancement mode power mosfet 24-mar-2017 rev. b page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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